Peculiarities of electron transport in SiOx films obtained by ion-plasma sputtering

被引：0
|
作者：
O. L. Bratus
A. A. Evtukh
V. V. Ilchenko
机构：
[1] NAS of Ukraine,V. E. Lashkaryov Institute of Semiconductor Physics
[2] Taras Shevchenko National University of Kyiv,Institute of High Technologies
来源：
Applied Nanoscience | 2020年 / 10卷
关键词：
Silicon nanoclusters; Electron transport; Current–voltage characteristic; Variable-range hopping; Trap;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical conductivity of SiOx and nanocomposite SiO2(Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanisms of the electrical conductivity of the SiOx and SiO2(Si) films have been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level (Mott’s mechanism). The minimum of current in current–voltage characteristics has been revealed in the temperature range 78–225 K. The qualitative model for explanation of the features of electron transport in SiOx and SiO2(Si) films has been proposed.
引用
收藏
页码：2723 / 2729
页数：6
相关论文
共 50 条
  • [1] Peculiarities of electron transport in SiOxfilms obtained by ion-plasma sputtering
    Bratus, O. L.
    Evtukh, A. A.
    Ilchenko, V. V.
    APPLIED NANOSCIENCE, 2020, 10 (08) : 2723 - 2729
  • [2] Forecasting of structure and properties of films obtained by ion-plasma sputtering
    Terpij, DM
    Ignatenko, PI
    Petukhov, VV
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2004, 26 (08): : 1063 - U1
  • [3] Forming peculiarities of tungsten films produced by ion-plasma sputtering method
    Koz'ma, A.A.
    Malykhin, S.V.
    Sobol', O.V.
    Borisova, S.S.
    Podtelezhnikov, A.A.
    Fizika i Khimiya Obrabotki Materialov, 1998, (03): : 49 - 55
  • [4] Films of immiscible systems obtained by three-electrode ion-plasma sputtering
    Bashev, V.
    Kushnerov, O.
    Kutseva, N.
    Popov, S.
    Potapovich, Yu.
    Ryabtsev, S.
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2021, 721 (01) : 30 - 37
  • [5] Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films
    Khlebnikov, Nikolai
    Polyakov, Evgenii
    Borisov, Sergei
    Barashev, Nikolai
    Biramov, Emir
    Maltceva, Anastasia
    Vereshchagin, Artem
    Khartov, Stas
    Voronin, Anton
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
  • [6] SOME PROPERTIES OF SNO2 SEMICONDUCTIVE FILMS OBTAINED BY REACTIVE ION-PLASMA SPUTTERING
    KUTUZOV, MK
    KOTOV, VV
    KRYACHKO, VV
    SYNOROV, VF
    INORGANIC MATERIALS, 1977, 13 (11) : 1616 - 1618
  • [7] Kinetics of the Electron Beam Induced Crystallization of Amorphous ZrO2 Films Obtained via Ion-Plasma and Laser Sputtering
    Bagmut, A. G.
    Beresnev, V. M.
    PHYSICS OF THE SOLID STATE, 2017, 59 (01) : 151 - 155
  • [8] Kinetics of the electron beam induced crystallization of amorphous ZrO2 films obtained via ion-plasma and laser sputtering
    A. G. Bagmut
    V. M. Beresnev
    Physics of the Solid State, 2017, 59 : 151 - 155
  • [9] Properties of AlN films deposited by reactive ion-plasma sputtering
    Bert, N. A.
    Bondarev, A. D.
    Zolotarev, V. V.
    Kirilenko, D. A.
    Lubyanskiy, Ya. V.
    Lyutetskiy, A. V.
    Slipchenko, S. O.
    Petrunov, A. N.
    Pikhtin, N. A.
    Ayusheva, K. R.
    Arsentyev, I. N.
    Tarasov, I. S.
    SEMICONDUCTORS, 2015, 49 (10) : 1383 - 1387
  • [10] Phase Formation in Be–Fe Layered System Obtained by Ion-Plasma Sputtering
    A. K. Zhubaev
    G. A. Rakhmetolla
    A. H. Toremurat
    G. N. Nurbolatova
    A. G. Omirserikova
    High Energy Chemistry, 2023, 57 : S168 - S171
12345