Photoemission Spectroscopy of Ta2NiSe5

被引：0
|
作者：
Y. Wakisaka
T. Sudayama
K. Takubo
T. Mizokawa
N. L. Saini
M. Arita
H. Namatame
M. Taniguchi
N. Katayama
M. Nohara
H. Takagi
机构：
[1] University of Tokyo,Department of Complex Science and Engineering and Department of Physics
[2] University of Rome,Department of Physics
[3] Hiroshima University,Hiroshima Synchrotron Radiation Center
[4] Hiroshima University,Graduate School of Science
[5] University of Tokyo,Department of Advanced Materials
来源：
Journal of Superconductivity and Novel Magnetism | 2012年 / 25卷
关键词：
Excitonic insulator; Layered chalcogenide; Photoemission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta2NiSe5 which shows a semiconductor-semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases.
引用
收藏
页码：1231 / 1234
页数：3
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