We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta2NiSe5 which shows a semiconductor-semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases.
机构:
Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanNagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan
Nakano, Akitoshi
Nagai, Takayuki
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Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan
Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, JapanNagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan
Nagai, Takayuki
Katayama, Naoyuki
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Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, JapanNagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan
Katayama, Naoyuki
Sawa, Hiroshi
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Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, JapanNagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan
Sawa, Hiroshi
Taniguchi, Hiroki
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Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanNagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan
机构:
South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Guangdong Prov Key Lab Chip & Integrat Technol, Guangzhou 510631, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Li, Si-Na
Zhou, Jun-Jie
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Zhou, Jun-Jie
Zhang, Jie-lian
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South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Guangdong Prov Key Lab Chip & Integrat Technol, Guangzhou 510631, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Zhang, Jie-lian
Yang, Si-Xian
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South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Yang, Si-Xian
Chen, Mei-Fei
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Chen, Mei-Fei
Liu, Yue
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South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Liu, Yue
Li, Jing-Bo
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Zhejiang Univ, Coll Opt Sci & Engn, Hangzhou 310027, Peoples R China
Guangdong Prov Key Lab Chip & Integrat Technol, Guangzhou 510631, Peoples R ChinaSouth China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
Li, Jing-Bo
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS,
2024,
310