Vapor-phase-processed fluorinated self-assembled monolayer for organic thin-film transistors

被引:0
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作者
Jeongkyun Roh
Changhee Lee
Jeonghun Kwak
Byung Jun Jung
Hyeok Kim
机构
[1] Inter-University Semiconductor Research Center,Department of Electrical and Computer Engineering
[2] Seoul National University,School of Electrical and Computer Engineering
[3] The University of Seoul,Department of Materials Science and Engineering
[4] The University of Seoul,Department of Electrical and Computer Engineering
[5] Inter-University Semiconductor Research Center,Construction Equipment Technology Center
[6] Seoul National University,undefined
[7] Korea Institute of Industrial Technology (KITECH),undefined
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关键词
Organic thin film transistors; Self-assembled monolayer; Bias stability;
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摘要
A vapor-phase-processed fluorinated silazane self-assembled monolayer (SAM), 1,3-bis(trifluoropropyl)-1,1,3,3-tetramethyldisilazane (FPDS), was introduced as a surface modifier for pentacene-based organic thin-film transistors (OTFTs). A remarkable improvement in the field effect mobility from 0.25 cm2/Vs (without SAM-treatment) to 0.42 cm2/Vs (with FPDS-treatment) was observed, which was attributed to the better pentacene growth on a hydrophobic surface. A significant reduction in the contact resistance was also observed by FPDS treatment due to the improved bulk conductivity and diminished charge trapping at the gate dielectric surface by the SAM treatment. In addition, FPDS treatment efficiently improved the bias stability of the OTFTs; the drain-to-source current degradation by the bias stress was greatly reduced from 80% to 50% by FPDS treatment, and the characteristic time for charge trapping of the FPDS treated OTFTs was approximately one order of magnitude larger than that of the OTFTs without SAM treatment.
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页码:941 / 945
页数:4
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