Kinetics and mechanism of reaction between silicon carbide and silica

被引：0
|
作者：
M. S. Khrushchev
机构：
[1] Siberian State Industrial University,
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Silicon Carbide; Cristobalite; Carbon Diffusion; Ferrosilicon; Isothermal Heat Treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The kinetics and mechanism of reaction between SiO2 and SiC are studied. The reaction rate is shown to be limited by the carbon diffusion from the SiC bulk to the SiC/SiO2 interface, where carbon reacts with the SiO and oxygen resulting from SiO2 decomposition. Equations are presented which describe the time variation of SiC conversion and the temperature variation of the carbon diffusivity in SiC.
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页码：462 / 464
页数：2
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