KINETICS AND MECHANISM OF OXIDATION OF SILICON-NITRIDE BONDED SILICON-CARBIDE CERAMIC

被引：1
|
作者：
TORLEY, M
BANKS, R
机构：
[1] Gas Research Cent, Leicestershire, United Kingdom
来源：
JOURNAL OF THERMAL ANALYSIS | 1994年 / 42卷 / 04期
关键词：
CERAMICS; KINETICS; MS; SILICON NITRIDE BONDED SILICON CARBIDE CERAMIC; TG;
D O I：
暂无
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Thermogravimetry (TG) has been used to study the oxidation of a commercial silicon nitride bonded silicon carbide (SNBSC) ceramic. The oxidation was studied in air and carbon dioxide atmospheres between 800 and 1300 degrees C. TG/mass spectrometry (MS) shows that the silicon nitride bonding phase oxidises first. The kinetics follow a multi-stage mechanism with diffusion control. Carbon dioxide was found to be a more powerful oxidant than air at temperatures above 1050 degrees C.
引用
收藏
页码：811 / 822
页数：12
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