Influence of x irradiation on internal friction in silicon

被引：0
|
作者：
N. P. Kulish
P. A. Maksimyuk
N. A. Mel’nikova
A. P. Onanko
A. M. Strutinskii
机构：
[1] T. Shevchenko State University,
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Spectroscopy; Silicon; Activation Energy; State Physics; Silicon Substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An investigation was made of the influence of γ irradiation on the temperature dependences of internal friction in disk-shaped silicon substrates in the kilohertz frequency range. After exposure to doses of 104 and 105 R, two dominant internal friction peaks were observed at ∼330 and ∼450 K with activation energies H1=0.6 eV and H2=0.9 eV, respectively. These peaks were evidently caused by reorientation of interstitial silicon atoms in dumbbell configurations.
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页码：1145 / 1146
页数：1
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