Influence of x irradiation on internal friction in silicon

被引:0
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作者
N. P. Kulish
P. A. Maksimyuk
N. A. Mel’nikova
A. P. Onanko
A. M. Strutinskii
机构
[1] T. Shevchenko State University,
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关键词
Spectroscopy; Silicon; Activation Energy; State Physics; Silicon Substrate;
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摘要
An investigation was made of the influence of γ irradiation on the temperature dependences of internal friction in disk-shaped silicon substrates in the kilohertz frequency range. After exposure to doses of 104 and 105 R, two dominant internal friction peaks were observed at ∼330 and ∼450 K with activation energies H1=0.6 eV and H2=0.9 eV, respectively. These peaks were evidently caused by reorientation of interstitial silicon atoms in dumbbell configurations.
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页码:1145 / 1146
页数:1
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