The material characteristics of single-walled carbon nanotubes (SWCNTs) influence the performance of SWCNT thin-film transistors (TFTs). In this study, a density gradient ultracentrifugation method was used to sort surfactant (sodium deoxycholate)-dispersed SWCNTs by length. SWCNTs of 150 ± 33 nm and 500 ± 91 nm long were fabricated into TFTs. The results show that the performance of SWCNT-TFTs is tube length dependent. TFTs fabricated using 500-nm long tubes have maximum on/off ratio around 105 with the mobility at ∼0.15 cm2/(V s), which is much higher than that of TFTs using 150-nm long tubes. Shorter tubes need higher tube density to form semiconducting paths, leading to lower on/off ratio and high contact resistance. Surfactant-wrapped SWCNTs will bundle into ropes of different size when tube density is high. It is critical to control tube length as well as surfactant residue content to build high performance SWCNT-TFTs.
机构:
Natl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, JapanNatl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan
Asada, Yuki
Nihey, Fumiyuki
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NEC Green Innovat Res Labs, Tsukuba, Ibaraki 3058501, Japan
Technol Res Assoc Single Wall Carbon Nanotubes, Tsukuba, Ibaraki 3058565, JapanNatl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan
Nihey, Fumiyuki
Ohmori, Shigekazu
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Natl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, JapanNatl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan
Ohmori, Shigekazu
Shinohara, Hisanori
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Nagoya Univ, Dept Chem, Chikusa Ku, Nagoya, Aichi 4648602, JapanNatl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan
Shinohara, Hisanori
Saito, Takeshi
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Natl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan
Technol Res Assoc Single Wall Carbon Nanotubes, Tsukuba, Ibaraki 3058565, JapanNatl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan
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Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USAPeking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
机构:
Dalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Aalto Univ, Dept Appl Phys, Sch Sci, FI-00076 Aalto, FinlandDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Liao, Yongping
Zhang, Zhao
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Dalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R ChinaDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Zhang, Zhao
Zhang, Qiang
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Aalto Univ, Dept Appl Phys, Sch Sci, FI-00076 Aalto, FinlandDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Zhang, Qiang
Wei, Nan
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Aalto Univ, Dept Appl Phys, Sch Sci, FI-00076 Aalto, FinlandDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Wei, Nan
Ahmad, Saeed
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Aalto Univ, Dept Appl Phys, Sch Sci, FI-00076 Aalto, FinlandDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Ahmad, Saeed
Tian, Ying
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Dalian Maritime Univ, Dept Phys, Dalian 116026, Liaoning, Peoples R ChinaDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China
Tian, Ying
Kauppinen, Esko, I
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Aalto Univ, Dept Appl Phys, Sch Sci, FI-00076 Aalto, FinlandDalian Polytech Univ, Sch Text & Mat Engn, Dalian 116034, Peoples R China