Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

被引:29
|
作者
Nobusa, Yuki [1 ]
Yomogida, Yohei [2 ]
Matsuzaki, Satoki [1 ]
Yanagi, Kazuhiro [3 ]
Kataura, Hiromichi [4 ,5 ]
Takenobu, Taishi [1 ,4 ,6 ]
机构
[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] Tokyo Metropolitan Univ, Dept Phys, Tokyo 1920397, Japan
[4] Japan Sci & Technol Agcy JST, CREST, Saitama 3320012, Japan
[5] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
[6] Japan Sci & Technol Agcy JST, PRESTO, Saitama 3320012, Japan
关键词
FIELD-EFFECT TRANSISTORS; INTEGRATED-CIRCUITS; PERFORMANCE; TRANSPARENT; ARRAYS;
D O I
10.1063/1.3657502
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 mu m) strictly limits the device size. Here, we surmount this limitation by combining inkjet technology and site-selective deposition based on the patterning of self-assembled monolayers. We have synthesized patterned SWCNT films with feature widths less than 100 mu m using this site-selective surface modification method, thus improving the performance limit of SWCNT printed electronics. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657502]
引用
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页数:3
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