Electrostatic Investigation of Intended Source Drain Ultra Thin Body FD-SOI MOSFET

In this paper, the proposed modified source and modified drain fully depleted silicon-on-insulator metal oxide semiconductor field effect transistor (FD-SOI MOSFET) presents better electrical performance as compared to the developed channel FD-SOI MOSFET with electric field modulation (DC-EFM FD-SOI MOSFET) Anvarifard MK, Orouji AA (IEEE Trans Electron Devices 65:1653–1657, 2018). Furthermore, the optimized modified source (MS), modified drain (MD) and modified source and drain (MS-MD) ultra-thin body (UTB) FD-SOI structure is also studied. The analysis and simulation has completed in regard to electrical parameter like threshold voltage, subthreshold slope, leakage current, on current to off current ratio (Ion/Ioff), substrate potential, and electric field distribution. By application of a low doping source profile underneath the high doping source profile in modified drain (MD) FD-SOI MOSFET shows improved sub-threshold slope, least leakage current, higher electric field inside drain area and approximately equal electric field peak at drain channel interfaces. Analyses also presents optimized modified source-drain (MS-MD) UTB FD-SOI MOSFET have least source to drain and approximately equal gate to drain capacitance of modified drain (MD) FD-SOI MOSFET. Moreover, simulation of modified-source (MS) FD-SOI shows best result with respect to higher surface potential and higher electron mobility. This comparison depicts that modified source-drain (MS-MD) UTB FD-SOI MOSFET is found to be compatible with analog as well as digital application.