An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures

被引：0
|
作者：
Pavan Vudumula
Siva Kotamraju
机构：
[1] IIIT Sricity,Department of Electronics and Communication Engineering
来源：
MRS Advances | 2018年 / 3卷 / 59期
关键词：
D O I：
10.1557/adv.2018.422
中图分类号：
学科分类号：
摘要：
In this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.
引用
收藏
页码：3433 / 3438
页数：5
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