Two-State Current Conduction in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate

被引：0
|
作者：
Chiang, Jung-Chin [1 ]
Hwu, Jenn-Gwo [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan
来源：
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 12 | 2011年 / 35卷 / 06期
关键词：
D O I：
10.1149/1.3570858
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In the high-k/SiO2 stacked dielectric MOS capacitor, the electrons captured by the defects associated with the oxygen vacancies in the dielectric may affect the trap assist tunneling current of the device. In this work, high bandgap material was utilized as substrate for its considerable interface states which are important to enhance the effect of trapped charges on the tunneling current. It was found that the electrons captured in high-k/SiO2 interface layer were crucial to block the current conduction path. Two-state current behavior was clearly observed by this mechanism.
引用
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页码：165 / 171
页数：7
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