Calculation of energy characteristics for Si1–xGex–Si structures with single quantum wells

被引：0
|
作者：
D. V. Ushakov
V. K. Kononenko
机构：
[1] Belarusian State University,B. I. Stepanov Institute of Physics
[2] National Academy of Sciences of Belarus,undefined
来源：
Journal of Applied Spectroscopy | 2011年 / 78卷
关键词：
Si; Ge; –Si system; single quantum well; ·; method; Luttinger parameters; effective mass approximation; optical transition energy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Energy characteristics of Si1–xGex–Si quantum-size structures with single quantum wells were calculated numerically based on a four-band k·p method. Analytical expressions for the Luttinger parameters are obtained as functions of the component composition of Si1–xGex compounds. Analytical expressions for the energy ħω of optical band-to-band transitions are obtained in an effective mass approximation and agree well with numerical calculations by the k·p method. This allows one to determine accurately a range of changes while varying the component compositions and thickness of the active and barrier layers.
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页码：59 / 68
页数：9
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