Improvement of extraction efficiency for GaN-based light emitting diodes

被引：0
|
作者：
YanKuin Su
ChunYuan Huang
JianJhong Chen
ChienChih Kao
ChunFu Tsai
机构：
[1] Cheng-Kung University,Department of Electrical Engineering, “National”
[2] Kun Shan University of Technology,Department of Electrical Engineering
[3] Cheng-Kung University,Institute of Microelectronics, “National”
[4] Cheng Kung University,Advanced Optoelectronic Technology Center, “National”
来源：
Science China Technological Sciences | 2010年 / 53卷
关键词：
extraction efficiency; light emitting diodes; patterned sapphire substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demonstrated to be a promising method to be widely exploited in the manufacture of all kinds of LED devices.
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页码：322 / 325
页数：3
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