Improvement of extraction efficiency for GaN-based light emitting diodes

A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demonstrated to be a promising method to be widely exploited in the manufacture of all kinds of LED devices.