Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers

被引：0
|
作者：
D. A. Livshits
A. Yu. Egorov
I. V. Kochnev
V. A. Kapitonov
V. M. Lantratov
N. N. Ledentsov
T. A. Nalyot
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2001年 / 35卷
关键词：
Output Power; Active Region; Power Density; Magnetic Material; Conversion Efficiency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10°C and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-µm-thick waveguide, operating at 1.03 µm. Record-breaking output mirror power densities of, respectively, 29.9 and 40 MW/cm2 have been achieved without catastrophic optical mirror damage in the two temperature-stabilization regimes. A maximum power conversion efficiency of 66% has been achieved in a laser with a cavity length of 2 mm.
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页码：365 / 369
页数：4
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