High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors

被引：7
|
作者：
Lammert, RM [1 ]
Ungar, JE [1 ]
Oh, SW [1 ]
Qi, H [1 ]
Chen, JS [1 ]
机构：
[1] Ortel Corp, Alhambra, CA 91803 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 09期
关键词：
D O I：
10.1049/el:19980638
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High power InGaAs-GaAs distributed feedback (DFB) lasers with nonabsorbing mirrors have been fabricated with over 200mW of single frequency CW optical pou;er at 25 degrees C (110mW at 95 degrees C). Unlike their distributed Bragg reflector counterparts, the DFB devices exhibit relatively linear optical power against current curves. Low threshold currents of similar to 10mA were also obtained.
引用
收藏
页码：886 / 887
页数：2
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