Deposition of copper oxide by reactive magnetron sputtering

被引：0
|
作者：
J. H. Lee
K. H. Jeong
W. H. Cho
W. J. Ho
H. J. Yang
C. S. Kim
J. G. Lee
机构：
[1] Kookmin University,School of Advanced Materials Engineering
[2] LG Display Co. Ltd.,Panel Defect Engineering Technology Team
[3] Korea Research Institute of Standards and Science,undefined
来源：
Metals and Materials International | 2011年 / 17卷
关键词：
oxides; sputtering; oxidation; X-ray diffraction; reactive sputtering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Copper oxide films were deposited on silicon substrates by direct current magnetron sputtering of Cu in a mixture of O2 and Ar gases. Oxidation of the target as a result of adsorption or ion-plating of the reactive gases directly affects the discharge current and composition of the deposited films. We propose a kinetic model that relates the target oxidation to the discharge current, showing a one-to-one relationship between the discharge current characteristics and composition of the deposited films.
引用
收藏
页码：917 / 921
页数：4
相关论文
共 50 条
  • [41] Note on the low deposition rate during reactive magnetron sputtering
    Depla, D.
    VACUUM, 2024, 228
  • [42] DEPOSITION OF ALN THIN-FILMS BY MAGNETRON REACTIVE SPUTTERING
    GEROVA, EV
    IVANOV, NA
    KIROV, KI
    THIN SOLID FILMS, 1981, 81 (03) : 201 - 206
  • [43] Reactive magnetron sputtering deposition and characterization of niobium carbide films
    Zhang, Kan
    Wen, M.
    Cheng, G.
    Li, X.
    Meng, Q. N.
    Lian, J. S.
    Zheng, W. T.
    VACUUM, 2014, 99 : 233 - 241
  • [44] Reactive pulse magnetron sputtering for deposition of piezoelectric AlN layers
    Gloess, D.
    Bartzsch, H.
    Gittner, M.
    Frach, P.
    Herzog, T.
    Walter, S.
    Heuer, H.
    PROCEEDINGS OF SENSORDEVICES 2011: THE SECOND INTERNATIONAL CONFERENCE ON SENSOR DEVICE TECHNOLOGIES AND APPLICATIONS, 2011, : 135 - 138
  • [45] HIGH REFLECTIVITY DIELECTRIC MIRROR DEPOSITION BY REACTIVE MAGNETRON SPUTTERING
    SCHERER, A
    WALTHER, M
    SCHIAVONE, LM
    VANDERGAAG, BP
    BEEBE, ED
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (05): : 3305 - 3311
  • [46] Copper nitride films deposited by dc reactive magnetron sputtering
    K. Venkata Subba Reddy
    A. Sivasankar Reddy
    P. Sreedhara Reddy
    S. Uthanna
    Journal of Materials Science: Materials in Electronics, 2007, 18 : 1003 - 1008
  • [47] Copper nitride films deposited by dc reactive magnetron sputtering
    Reddy, K. Venkata Subba
    Reddy, A. Sivasankar
    Reddy, P. Sreedhara
    Uthanna, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (10) : 1003 - 1008
  • [48] COPPER SULFIDE FILMS DEPOSITED BY CYLINDRICAL MAGNETRON REACTIVE SPUTTERING
    JONATH, AD
    ANDERSON, WW
    THORNTON, JA
    CORNOG, DG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 200 - 203
  • [49] Reactive direct current magnetron sputtering of tungsten oxide: A correlation between film properties and deposition pressure
    Salinga, Christian
    Kappertz, Oliver
    Wuttig, Matthias
    THIN SOLID FILMS, 2006, 515 (04) : 2760 - 2764
  • [50] DEPOSITION OF TIN-DOPED INDIUM OXIDE-FILMS BY A MODIFIED REACTIVE MAGNETRON SPUTTERING PROCESS
    KARIM, AA
    DESHPANDEY, C
    DOERR, HJ
    BUNSHAH, RF
    THIN SOLID FILMS, 1989, 172 (01) : 111 - 121
12345