Deposition of copper oxide by reactive magnetron sputtering

被引：0
|
作者：
J. H. Lee
K. H. Jeong
W. H. Cho
W. J. Ho
H. J. Yang
C. S. Kim
J. G. Lee
机构：
[1] Kookmin University,School of Advanced Materials Engineering
[2] LG Display Co. Ltd.,Panel Defect Engineering Technology Team
[3] Korea Research Institute of Standards and Science,undefined
来源：
Metals and Materials International | 2011年 / 17卷
关键词：
oxides; sputtering; oxidation; X-ray diffraction; reactive sputtering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Copper oxide films were deposited on silicon substrates by direct current magnetron sputtering of Cu in a mixture of O2 and Ar gases. Oxidation of the target as a result of adsorption or ion-plating of the reactive gases directly affects the discharge current and composition of the deposited films. We propose a kinetic model that relates the target oxidation to the discharge current, showing a one-to-one relationship between the discharge current characteristics and composition of the deposited films.
引用
收藏
页码：917 / 921
页数：4
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