Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO3 thin films

被引：0
|
作者：
J.-M. Liu
C.K. Ong
机构：
[1] Institute of Materials Research and Engineering,
[2] Science Drive 4,undefined
[3] National University of Singapore,undefined
[4] Lower Kent Ridge Road,undefined
[5] Singapore 119260 (E-mail: liu-jm@imre.org.sg),undefined
[6] Department of Physics,undefined
[7] Faculty of Science,undefined
[8] National University of Singapore,undefined
[9] Lower Kent Ridge Road,undefined
[10] Singapore 119260,undefined
来源：
Applied Physics A | 1998年 / 67卷
关键词：
PACS: 81.15.Fg; 81.40.-z; 73.50.-h; 78.20.-e;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(LO) mode peak at 579 cm-1, indicating oxygen deficiency in the films. Significant dependence of the electrical property for the films on substrate temperature was shown. The I–V relation of the films exhibited non-ohmic behavior. Whereas the films deposited above 500 °C showed a metal-like property, at a lower substrate temperature semiconducting thin films were achieved. The (001)-oriented LiNbO3/ZnO heterostructure was successfully prepared on quartz fused and (001) sapphire plates.
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页码：493 / 497
页数：4
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