Experimental Study of the Insulator-to-Metal Phase Transition in VO2 Thin Films in the Microwave Range

被引：1

作者：

Lelyuk D.P. ^{[1
]}

Mishin A.D. ^{[1
]}

Maklakov S.S. ^{[1
]}

Makarevich A.M. ^{[2
]}

Sharovarov D.I. ^{[2
]}

机构：

[1] Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow

[2] Lomonosov Moscow State University, Moscow

来源：

Inorganic Materials: Applied Research | 2019年 / 10卷 / 04期

关键词：

film resistance; phase transition; quasi-optical microwave measurements; temperature hysteresis; vanadium dioxide;

D O I：

10.1134/S2075113319040245

中图分类号：

学科分类号：

摘要：

Abstract: Temperature dependence of insulator-to-metal phase transition in VO2 epitaxial thin films was studied in the microwave range. Biaxially textured VO2 thin films were obtained on 3-inch sapphire substrates by the method of chemical vapour deposition (MCVD). The change in the electrical resistance with temperature reached approximately 3 orders of magnitude for the obtained films, measured in the metal-insulator phase transition region. Using a high-temperature quasi-optical setup, the microwave features of the phase transition in VO2 thin films were studied at temperature. The hysteresis of microwave properties of the studied samples was observed in the temperature range of VO2 phase transition. © 2019, Pleiades Publishing, Ltd.

引用

页码：775 / 780

页数：5

共 50 条

[31] Persistent insulator-to-metal transition of a VO2 thin film induced by soft X-ray irradiation
Muraoka, Yuji
Nagao, Hiroki
Katayama, Shinsuke
Wakita, Takanori
Hirai, Masaaki
Yokoya, Takayoshi
Kumigashira, Hiroshi
Oshima, Masaharu
Japanese Journal of Applied Physics, 2014, 53 (5 SPEC. ISSUE 1)
[32] Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2
Frenzel, A.
Qazilbash, M. M.
Brehm, M.
Chae, Byung-Gyu
Kim, Bong-Jun
Kim, Hyun-Tak
Balatsky, A. V.
Keilmann, F.
Basov, D. N.
PHYSICAL REVIEW B, 2009, 80 (11)
[33] Persistent insulator-to-metal transition of a VO2 thin film induced by soft X-ray irradiation
Muraoka, Yuji
Nagao, Hiroki
Katayama, Shinsuke
Wakita, Takanori
Hirai, Masaaki
Yokoya, Takayoshi
Kumigashira, Hiroshi
Oshima, Masaharu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
[34] Study of fractality nature in VO2 films and its influence on metal-insulator phase transition
Efremov, A. A.
Romaniuk, B. M.
Melnyk, V. P.
Stadnik, O. A.
Sabov, T. M.
Kulbachinskiy, O. A.
Dubikovskiy, O. V.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2024, 27 (01) : 28 - 39
[35] Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO2 thin films
Rodriguez-Vega, M.
Simons, M. T.
Radue, E.
Kittiwatanakul, S.
Lu, J.
Wolf, S. A.
Lukaszew, R. A.
Novikova, I.
Rossi, E.
PHYSICAL REVIEW B, 2015, 92 (11)
[36] Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics
Zhou, You
Ramanathan, Shriram
JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)
[37] Size effects on stress relaxation across the metal–insulator transition in VO2 thin films
Viswanath Balakrishnan
Changhyun Ko
Shriram Ramanathan
Journal of Materials Research, 2011, 26 : 1384 - 1387
[38] Insulator to metal transition induced by surface plasmon polaritons in VO2/Au thin films
Madaras, S. E.
Creeden, J.
Kittiwatanakul, S.
Lu, J.
Novikova, I
Lukaszew, And R. A.
OPTICS EXPRESS, 2018, 26 (20): : 25657 - 25666
[39] Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
Fu, Deyi
Liu, Kai
Tao, Tao
Lo, Kelvin
Cheng, Chun
Liu, Bin
Zhang, Rong
Bechtel, Hans A.
Wu, Junqiao
JOURNAL OF APPLIED PHYSICS, 2013, 113 (04)
[40] RADIO FREQUENCY TEMPERATURE TRANSDUCERS BASED ON INSULATOR-METAL PHASE TRANSITION IN VO2 AND GE-DOPED VO2 ALD THIN FILMS
Muller, Andrei A.
Khadar, Riyaz
Niang, Kham M.
Bai, Guandong
Matioli, Elison
Robertson, John
Ionescu, Adrian M.
2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2021, : 1355 - 1358

← 1 2 3 4 5 →