Experimental Study of the Insulator-to-Metal Phase Transition in VO2 Thin Films in the Microwave Range

被引：1
|
作者：
Lelyuk D.P. [1 ]
Mishin A.D. [1 ]
Maklakov S.S. [1 ]
Makarevich A.M. [2 ]
Sharovarov D.I. [2 ]
机构：
[1] Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow
[2] Lomonosov Moscow State University, Moscow
来源：
Inorganic Materials: Applied Research | 2019年 / 10卷 / 04期
关键词：
film resistance; phase transition; quasi-optical microwave measurements; temperature hysteresis; vanadium dioxide;
D O I：
10.1134/S2075113319040245
中图分类号：
学科分类号：
摘要：
Abstract: Temperature dependence of insulator-to-metal phase transition in VO2 epitaxial thin films was studied in the microwave range. Biaxially textured VO2 thin films were obtained on 3-inch sapphire substrates by the method of chemical vapour deposition (MCVD). The change in the electrical resistance with temperature reached approximately 3 orders of magnitude for the obtained films, measured in the metal-insulator phase transition region. Using a high-temperature quasi-optical setup, the microwave features of the phase transition in VO2 thin films were studied at temperature. The hysteresis of microwave properties of the studied samples was observed in the temperature range of VO2 phase transition. © 2019, Pleiades Publishing, Ltd.
引用
收藏
页码：775 / 780
页数：5
相关论文
共 50 条
  • [11] Phase-field model of insulator-to-metal transition in VO2 under an electric field
    Shi, Yin
    Chen, Long-Qing
    PHYSICAL REVIEW MATERIALS, 2018, 2 (05):
  • [12] A metal-insulator transition study of VO2 thin films grown on sapphire substrates
    Yu, Shifeng
    Wang, Shuyu
    Lu, Ming
    Zuo, Lei
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (23)
  • [13] Current-Driven Insulator-To-Metal Transition in Strongly Correlated VO2
    Shi, Yin
    Chen, Long-Qing
    PHYSICAL REVIEW APPLIED, 2019, 11 (01)
  • [14] Resolving the VO2 controversy: Mott mechanism dominates the insulator-to-metal transition
    Najera, O.
    Civelli, M.
    Dobrosavljevic, V.
    Rozenberg, M. J.
    PHYSICAL REVIEW B, 2017, 95 (03)
  • [15] Phase coexistence in the metal-insulator transition of a VO2 thin film
    Chang, YJ
    Koo, CH
    Yang, JS
    Kim, YS
    Kim, DH
    Lee, JS
    Noh, TW
    Kim, HT
    Chae, BG
    THIN SOLID FILMS, 2005, 486 (1-2) : 46 - 49
  • [16] Insulator-to-metal transition in ultrathin rutile VO2/TiO2(001)
    Lahneman, D. J.
    Slusar, Tetiana
    Beringer, D. B.
    Jiang, Haoyue
    Kim, Chang-Yong
    Kim, Hyun-Tak
    Qazilbash, M. M.
    NPJ QUANTUM MATERIALS, 2022, 7 (01)
  • [17] Raman study of the phase transition in VO2 thin films
    Pan, M
    Liu, J
    Zhong, HM
    Wang, SW
    Li, ZF
    Chen, XH
    Lu, W
    JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) : 178 - 183
  • [18] Microwave switching functions using reversible metal-insulator transition (MIT) in VO2 thin films
    Crunteanu, Aurelian
    Dumas-Bouchiat, Frederic
    Champeaux, Corinne
    Catherinot, Alain
    Pothier, Arnaud
    Blondy, Pierre
    2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, : 12 - +
  • [19] Mapping the electrocatalytic water splitting activity of VO2 across its insulator-to-metal phase transition
    Kim, Kyeong-Ho
    Kim, Kyung-Hwan
    Choi, Wooseon
    Kim, Young-Min
    Hong, Seong-Hyeon
    Choi, Yun-Hyuk
    NANOSCALE, 2022, 14 (23) : 8281 - 8290
  • [20] Generation of electrical self-oscillations in two-terminal switching devices based on the insulator-to-metal phase transition of VO2 thin films
    Leroy, Jonathan
    Crunteanu, Aurelian
    Givernaud, Julien
    Orlianges, Jean-Christophe
    Champeaux, Corinne
    Blondy, Pierre
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2012, 4 (01) : 101 - 107
12345