Integrated D-band transmitter and receiver for wireless data communication in 65 nm CMOS

被引：0

作者：

Zhiwei Xu

Qun Jane Gu

Yi-Cheng Wu

Mau-Chung Frank Chang

机构：

[1] HRL Laboratories LLC,Electrical and Computer Engineering Department

[2] University of California,Electrical Engineering Department

[3] University of California,undefined

来源：

Analog Integrated Circuits and Signal Processing | 2015年 / 82卷

关键词：

Injection locking buffer; Low noise amplifier (LNA); Non-coherent modulation; On–off key; Power amplifier (PA); Mm-wave circuits; Voltage controlled oscillator (VCO);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A 140 GHz transmitter (Tx) and receiver (Rx) chip set has been developed in 65 nm CMOS by using on–off keying non-coherent modulation to support high speed proximity data communication. To the author’s best knowledge, it enables the first integrated multi-Gbps data link in D-band by saving power hungry frequency synthesizer, high speed data convertors and complicated digital signal processor. The Tx and Rx occupy 0.03 and 0.12 mm2 chip areas, respectively. To validate the communication at 140 GHz carrier frequency, a data link has been built to demonstrate up to 2.5 Gbps data rate with power consumption of 115/120 mW for Tx/Rx respectively.

引用

页码：171 / 179

页数：8

共 50 条

[41] A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS
Tomkins, Alexander
Garcia, Patrice
Voinigescu, Sorin P.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (10) : 1981 - 1991
[42] A D-Band Patch Array Antenna Using 180 nm CMOS Process
Chung, Ming-An
Yang, Chih-Wei
Tseng, Kuo-Chun
2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC, 2023, : 429 - 431
[43] A D-Band Multiplier-Based OOK Transceiver With Supplementary Transistor Modeling in 65-nm Bulk CMOS Technology
Suh, Bohee
Lee, Hyunkyu
Kim, Sooyeon
Jeon, Sanggeun
IEEE ACCESS, 2019, 7 : 7783 - 7793
[44] A D-Band Wideband Single-Ended Neutralized Upconversion Mixer With Controlled LO Feedthrough in 65-nm CMOS
Wang, Chun
Liu, Chenxin
Herdian, Hans
Shehata, Abanob
Mayeda, Jill
Kunihiro, Kazuaki
Sakai, Hiroyuki
Shirane, Atsushi
Okada, Kenichi
IEEE SOLID-STATE CIRCUITS LETTERS, 2024, 7 : 167 - 170
[45] A Wide Bandwidth Analog Baseband Circuit for 60-GHz Proximity Wireless Communication Receiver in 65-nm CMOS
Furuta, Masanori
Okuni, Hidenori
Hosoya, Masahiro
Sai, Akihide
Matsuno, Junya
Saigusa, Shigehito
Itakura, Tetsuro
IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, 2015, E98A (02) : 492 - 499
[46] Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver
Hassona, Ahmed
Vassilev, Vessen
Zaman, Ashraf Uz
Yan, Yu
An, Sining
He, Zhongxia Simon
Habibpour, Omid
Carpenter, Sona
Bao, Mingquan
Zirath, Herbert
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2020, 10 (03) : 321 - 330
[47] A D-band CMOS Power Amplifier for Wireless Chip-to-Chip Communications with 22.3 dB Gain and 12.2 dBm P1dB in 65-nm CMOS Technology
Son, H. S.
Lee, C. J.
Kang, D. M.
Jang, T. H.
Lee, H. S.
Kim, S. H.
Byeon, C. W.
Park, C. S.
2018 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR), 2018, : 35 - 38
[48] A 120-GHz Transmitter and Receiver Chipset with 9-Gbps Data Rate Using 65-nm CMOS Technology
Fujimoto, Ryuichi
Motoyoshi, Mizuki
Takano, Kyoya
Yodprasit, Uroschanit
Fujishima, Minoru
IEICE TRANSACTIONS ON ELECTRONICS, 2012, E95C (07): : 1154 - 1162
[49] Dual Band Wireless Power and Bi-Directional Data Link for Implanted Devices in 65 nm CMOS
Talla, Vamsi
Ranganathan, Vaishnavi
Mahoney, Brody
Smith, Joshua R.
2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, : 658 - 661
[50] A 300 GHz Data Communication Receiver Using Plasma-Wave FET Detector in 65nm CMOS
Wu, Kefei
Shafee, Marwah
Le Bars, Philippe
Sahyoun, Walaa
Blin, Stephane
Ducournau, Guillaume
Knap, Wojciech
Hella, Mona Mostafa
2020 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS 2020), 2020, : 72 - 75

← 1 2 3 4 5 →