The initial stage of growth of self-induced GaN nanowires

被引：0
|
作者：
A. A. Koryakin
N. V. Sibirev
V. G. Dubrovskii
机构：
[1] St. Petersburg Academic University,Ioffe Physical Technical Institute
[2] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2014年 / 40卷
关键词：
Technical Physic Letter; Wetting Layer; Island Size; Molecular Beam Epitaxy Growth; Material Balance Equation;
D O I：
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学科分类号：
摘要：
The initial growth stage of self-induced GaN nanowires (NWs) on an AlN(0001)/Si(111) substrate is studied theoretically. Calculations are carried out within the model of Stranski-Krastanov quantum dot formation. The surface density of GaN islands is calculated, the formation of which precedes NW formation. GaN NW density is found as a function of gallium flux and deposition time for the case of molecular beam epitaxy growth.
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页码：471 / 474
页数：3
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