The initial stage of growth of self-induced GaN nanowires

被引：0
|
作者：
A. A. Koryakin
N. V. Sibirev
V. G. Dubrovskii
机构：
[1] St. Petersburg Academic University,Ioffe Physical Technical Institute
[2] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2014年 / 40卷
关键词：
Technical Physic Letter; Wetting Layer; Island Size; Molecular Beam Epitaxy Growth; Material Balance Equation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The initial growth stage of self-induced GaN nanowires (NWs) on an AlN(0001)/Si(111) substrate is studied theoretically. Calculations are carried out within the model of Stranski-Krastanov quantum dot formation. The surface density of GaN islands is calculated, the formation of which precedes NW formation. GaN NW density is found as a function of gallium flux and deposition time for the case of molecular beam epitaxy growth.
引用
收藏
页码：471 / 474
页数：3
相关论文
共 50 条
  • [21] Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction (vol 98, 261907, 2011)
    Woelz, M.
    Kaganer, V. M.
    Brandt, O.
    Geelhaar, L.
    Riechert, H.
    APPLIED PHYSICS LETTERS, 2012, 100 (17)
  • [22] Scaling thermodynamic model for the self-induced nucleation of GaN nanowires (vol 85, pg 165317, 2012)
    Dubrovskii, Vladimir G.
    Consonni, Vincent
    Trampert, Achim
    Geelhaar, Lutz
    Riechert, Henning
    PHYSICAL REVIEW B, 2012, 85 (19):
  • [23] Self-assembled growth of GaN nanowires
    Debnath, R. K.
    Meijers, R.
    Jeganathan, K.
    Richter, T.
    Stoica, T.
    Calarco, R.
    Lueth, H.
    EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007, 2008, 126
  • [24] Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
    Tyagi, Prashant
    Ramesh, Ch.
    Kushvaha, S. S.
    Gupta, Govind
    Kumar, M. Senthil
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (06) : 3919 - 3924
  • [25] In situ investigation of self-induced GaN nanowire nucleation on Si
    Cheze, C.
    Geelhaar, L.
    Trampert, A.
    Riechert, H.
    APPLIED PHYSICS LETTERS, 2010, 97 (04)
  • [26] Indium doping effect on GaN in the initial growth stage
    Yuan, HR
    Lu, DC
    Liu, XL
    Chen, Z
    Wang, XH
    Wang, D
    Han, PD
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (08) : 977 - 979
  • [27] A geometrical model of GaN morphology in initial growth stage
    Yuan, HR
    Chen, Z
    Lu, DC
    Liu, XL
    Han, PD
    Wang, XH
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (01) : 115 - 120
  • [28] Indium doping effect on GaN in the initial growth stage
    Hairong Yuan
    Da-Cheng Lu
    Xianglin Liu
    Zhen Chen
    Xiaohui Wang
    Du Wang
    Peide Han
    Journal of Electronic Materials, 2001, 30 : 977 - 979
  • [29] Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
    Koblmueller, G.
    Hertenberger, S.
    Vizbaras, K.
    Bichler, M.
    Bao, F.
    Zhang, J-P
    Abstreiter, G.
    NANOTECHNOLOGY, 2010, 21 (36)
  • [30] Growth of GaN nanowires on epitaxial GaN
    Aurongzeb, D.
    Song, D. Y.
    Kipshidze, G.
    Yavich, B.
    Nyakiti, L.
    Lee, R.
    Chaudhuri, J.
    Temkin, H.
    Holtz, M.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (08) : 1076 - 1081
12345