Photoinduced Crystallization of Sb2Se3 and Ge2Sb2Te5 Chalcogenide Films

被引:0
|
作者
Y. S. Lebedeva
M. P. Smayev
I. A. Budagovsky
M. E. Fedyanina
I. S. Sinev
T. S. Kunkel
A. V. Romashkin
P. A. Smirnov
A. A. Sherchenkov
S. A. Kozyukhin
P. I. Lazarenko
机构
[1] National Research University of Electronic Technology (MIET),
[2] Lebedev Physical Institute,undefined
[3] Russian Academy of Sciences,undefined
[4] ITMO University,undefined
[5] Moscow Institute of Physics and Technology,undefined
[6] Kurnakov Institute of General and Inorganic Chemistry,undefined
[7] Russian Academy of Sciences,undefined
[8] National Research Tomsk State University,undefined
关键词
chalcogenide films; phase-change materials; laser crystallization; surface; optical properties; spectrophotometry; ellipsometry; atomic-force microscopy; Raman spectroscopy;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:S339 / S348
相关论文
共 50 条
  • [31] EFFECT OF SB, TE, AND GE ADDITION ON OPTICAL-RECORDING FILMS WITH GE2SB2TE5 COMPOSITION
    MATSUSHITA, T
    SUZUKI, A
    KAMITANI, Y
    OKUDA, M
    NAITO, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 133 (02): : 395 - 410
  • [32] Multilevel data storage characteristics of phase change memory cell with doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3)
    Rao, Feng
    Song, Zhitang
    Zhong, Min
    Wu, Liangcai
    Feng, Gaoming
    Liu, Bo
    Feng, Songlin
    Chen, Bomy
    Japanese Journal of Applied Physics, Part 2: Letters, 2007, 46 (1-3):
  • [33] Switching effects in the films based on Ge2Sb2Te5
    S. A. Kozyukhin
    A. S. Kuz’minykh
    A. Yu. Mityagin
    B. V. Khlopov
    G. V. Chucheva
    Journal of Communications Technology and Electronics, 2011, 56 : 188 - 191
  • [34] Electrical conductivity measurements in Ge2Sb2Te5 films
    Qamhieh, N.
    Ghamlouche, H.
    Mahmoud, S. T.
    Al-Shamisi, H.
    Ahmad, S.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (10): : 3157 - 3160
  • [35] Structural transformations in thin Ge2Sb2Te5 films
    Kozyukhin, S. A.
    Sherchenkov, A. A.
    Gorshkova, E. V.
    Kudoyarova, V. Kh.
    Vargunin, A. I.
    INORGANIC MATERIALS, 2009, 45 (04) : 361 - 365
  • [36] Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe
    Zhou, P.
    Shin, Y. C.
    Choi, B. J.
    Choi, S.
    Hwang, C. S.
    Lin, Y. Y.
    Lv, H. B.
    Yan, X. J.
    Tang, T. A.
    Chen, L. Y.
    Chen, B. M.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (09) : H281 - H283
  • [37] Switching effects in the films based on Ge2Sb2Te5
    Kozyukhin, S. A.
    Kuz'minykh, A. S.
    Mityagin, A. Yu.
    Khlopov, B. V.
    Chucheva, G. V.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2011, 56 (02) : 188 - 191
  • [38] Structural transformations in thin Ge2Sb2Te5 films
    S. A. Kozyukhin
    A. A. Sherchenkov
    E. V. Gorshkova
    V. Kh. Kudoyarova
    A. I. Vargunin
    Inorganic Materials, 2009, 45 : 361 - 365
  • [39] Multilevel Recording in Ge2Sb2Te5 Thin Films
    S. A. Fefelov
    L. P. Kazakova
    N. A. Bogoslovskiy
    A. B. Bylev
    A. O. Yakubov
    Semiconductors, 2020, 54 : 450 - 453
  • [40] Multilevel Recording in Ge2Sb2Te5 Thin Films
    Fefelov, S. A.
    Kazakova, L. P.
    Bogoslovskiy, N. A.
    Bylev, A. B.
    Yakubov, A. O.
    SEMICONDUCTORS, 2020, 54 (04) : 450 - 453