Self-organized nanostructures in Si1-xGex films on Si(001)

被引：0
|
作者：
C. Teichert
J.C. Bean
M.G. Lagally
机构：
[1] Dept. of Materials Science and Engineering,
[2] University of Wisconsin-Madison,undefined
[3] Madison,undefined
[4] WI 53706,undefined
[5] USA,undefined
[6] Max Planck Institute of Microstructure Physics,undefined
[7] Weinberg 2,undefined
[8] D-06120 Halle,undefined
[9] Germany (Fax: +43-3842/402-760,undefined
[10] E-mail: teichert@unileoben.ac.at),undefined
[11] Lucent Technologies,undefined
[12] Murray Hill,undefined
[13] NJ 07974,undefined
[14] USA,undefined
来源：
Applied Physics A | 1998年 / 67卷
关键词：
PACS: 68.35.Bs; 68.65.+g; 61.61.ch;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：675 / 685
页数：10
相关论文
共 50 条
  • [1] Self-organized nanostructures in Si1-xGex films on Si(001)
    Teichert, C
    Bean, JC
    Lagally, MG
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (06): : 675 - 685
  • [2] Biaxial moduli of coherent Si1-xGex films on Si (001)
    Floro, JA
    Chason, E
    Lee, SR
    Petersen, GA
    APPLIED PHYSICS LETTERS, 1997, 71 (12) : 1694 - 1696
  • [3] Relaxation of (001)Si/Si1-xGex/Si heterostructures
    Xin, Y
    Brown, PD
    Schaublin, RE
    Humphreys, CJ
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 183 - 186
  • [4] Second harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001).
    Ekerdt, J
    Parkinson, P
    Downer, MC
    Gravilenko, V
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U450 - U450
  • [5] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
  • [6] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6533 - 6540
  • [7] EVOLUTION OF STRAIN RELAXATION IN COMPOSITIONALLY GRADED SI1-XGEX FILMS ON SI(001)
    LI, JH
    KOPPENSTEINER, E
    BAUER, G
    HOHNISCH, M
    HERZOG, HJ
    SCHAFFLER, F
    APPLIED PHYSICS LETTERS, 1995, 67 (02) : 223 - 225
  • [8] Hole mobility of strained Si/(001)Si1-xGex
    WANG XiaoYan1
    2 Department of Electron and Electricity Engineering
    Science China(Physics,Mechanics & Astronomy), 2012, Mechanics & Astronomy)2012 (01) : 48 - 54
  • [9] 应变Si/（001）Si1-xGex价带结构
    周春宇
    刘超
    石松宁
    宋建军
    固体电子学研究与进展, 2010, 30 (04) : 503 - 506
  • [10] STRAIN RELAXATION IN SI1-XGEX LAYERS ON SI(001)
    CAPANO, MA
    HART, L
    BOWEN, DK
    GORDONSMITH, D
    THOMAS, CR
    GIBBINGS, CJ
    HALLIWELL, MAG
    HOBBS, LW
    JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 260 - 270
12345