Biaxial moduli of coherent Si1-xGex films on Si (001)

被引：13
|
作者：
Floro, JA
Chason, E
Lee, SR
Petersen, GA
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 12期
关键词：
D O I：
10.1063/1.120006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The biaxial moduli of coherently strained Si1-xGex thin films have been determined over the composition range x=0.15-0.6 from independent measurements of film stress and strain. Our results indicate that use of the rule of mixtures to determine the strained-alloy elastic constants from the bulk values for pure Si and Ge is valid, and that higher-order elastic effects are relatively unimportant over this composition range. (C) 1997 American Institute of Physics.
引用
收藏
页码：1694 / 1696
页数：3
相关论文
共 50 条
  • [1] Evolution of coherent islands in Si1-xGex/Si(001)
    Floro, JA
    Chason, E
    Freund, LB
    Twesten, RD
    Hwang, RQ
    Lucadamo, GA
    [J]. PHYSICAL REVIEW B, 1999, 59 (03): : 1990 - 1998
  • [2] Relaxation of (001)Si/Si1-xGex/Si heterostructures
    Xin, Y
    Brown, PD
    Schaublin, RE
    Humphreys, CJ
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 183 - 186
  • [3] Self-organized nanostructures in Si1-xGex films on Si(001)
    C. Teichert
    J.C. Bean
    M.G. Lagally
    [J]. Applied Physics A, 1998, 67 : 675 - 685
  • [4] Self-organized nanostructures in Si1-xGex films on Si(001)
    Teichert, C
    Bean, JC
    Lagally, MG
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (06): : 675 - 685
  • [5] Second harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001).
    Ekerdt, J
    Parkinson, P
    Downer, MC
    Gravilenko, V
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U450 - U450
  • [6] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    [J]. Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
  • [7] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6533 - 6540
  • [8] EVOLUTION OF STRAIN RELAXATION IN COMPOSITIONALLY GRADED SI1-XGEX FILMS ON SI(001)
    LI, JH
    KOPPENSTEINER, E
    BAUER, G
    HOHNISCH, M
    HERZOG, HJ
    SCHAFFLER, F
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (02) : 223 - 225
  • [9] Hole mobility of strained Si/(001)Si1-xGex
    WANG XiaoYan1
    2 Department of Electron and Electricity Engineering
    [J]. Science China(Physics,Mechanics & Astronomy), 2012, Mechanics & Astronomy)2012 (01) : 48 - 54
  • [10] 应变Si/(001)Si1-xGex价带结构
    周春宇
    刘超
    石松宁
    宋建军
    [J]. 固体电子学研究与进展, 2010, 30 (04) : 503 - 506
12345