Relaxation of (001)Si/Si1-xGex/Si heterostructures

被引：0
|
作者：
Xin, Y
Brown, PD
Schaublin, RE
Humphreys, CJ
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来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
摘要：
As-grown and annealed (001)Si/Si(1-x)Gex/Si heterostructures have been studied with x=0.12 corresponding to 0.49% strain. It is found that there are misfit dislocations at the two interfaces and also dislocations deep into the Si substrate and in the Si cap. It is tentatively suggested that the dislocation sources are small dislocation loops, the formation of which is possibly related to boron doping and subsequent annealing. The dissociation of misfit dislocations is observed.
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页码：183 / 186
页数：4
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