Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors

被引：0
|
作者：
S. O. Slipchenko
O. S. Soboleva
A. A. Podoskin
Y. K. Kirichenko
T. A. Bagaev
I. V. Yarotskaya
N. A. Pikhtin
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2023年 / 57卷
关键词：
thyristor; impact ionization; drift-diffusion model;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：166 / 171
页数：5
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