P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors

被引：0
|
作者：
A. T. Gorelenok
A. A. Tomasov
N. M. Shmidt
É. A. Il’ichev
V. M. Lantratov
Yu. M. Zadiranov
P. N. Brunkov
O. V. Titkova
N. A. Kalyuzhnyĭ
S. A. Mintarov
V. N. Mdivani
V. V. Katsoev
L. V. Katsoev
S. S. Shmelev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Lukin Scientific Research Institute of Physical Problems,undefined
来源：
Technical Physics Letters | 2006年 / 32卷
关键词：
29.40.Wk; 73.40.Kp;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that p-i-n detectors of α particles can be created using high-ohmic (n ∼ 1012 cm−3) gallium arsenide obtained through lanthanide gettering of a low-ohmic (n ∼ 1015 cm−3) initial material wafers.
引用
收藏
页码：987 / 989
页数：2
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