Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors

被引：0
|
作者：
Siva Pratap Reddy Mallem
Ki-Sik Im
Terirama Thingujam
Jung-Hee Lee
Raphael Caulmilone
Sorin Cristoloveanu
机构：
[1] Kyungpook National University,School of Electronics Engineering
[2] Kumoh National Institute of Technology,Advanced Material Research Center
[3] SOITEC,Institute of Microelectronics, Electromagnetism, and Photonics
[4] Grenoble Polytechnic Institute,undefined
[5] Minatec,undefined
来源：
Electronic Materials Letters | 2020年 / 16卷
关键词：
GaNOI; Nanowire; Wrap-gate transistor; Triangular/trapezoidal architectures; Corner angle;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：433 / 440
页数：7
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