A micro-structured Si@Cu3Si@C ternary composite is designed to ease volume expansion of Si as well as to enhance the conductivity of the whole electrode. Structurally, Si particles with carbon shells are agglomerated to form a hierarchical micro-structured ternary component sphere. A benign initial coulombic efficiency (ICE) 70.5% with high reversible capacity after 200 cycles (1477 mAh g−1, 400 mA g−1) of Si@Cu3Si@C anode can be obtained to demonstrate the superiorities of this structure. This unique porous hierarchical structure can be helpful to facilitate the ions transmission and provide void spaces for stress releasing while improving the conductivity of Si. Carbon shells formed on the Si are available for improving the conductivity of Si electrode and easing some extra side reactions. Cu3Si alloy acts as a buffer to alleviate the volume expansion of Si. Thus, a comparable stable structure with high conductivity can be maintained for enhancing the performance of Si. In addition, a low vacuum carbonization process is also used for energy saving which might be adopted in other materials fabrication.
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Li, Wenwu
Liao, Jun
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Liao, Jun
Li, Xinwei
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Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518071, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Li, Xinwei
Zhang, Lei
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Zhang, Lei
Zhao, Bote
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Zhao, Bote
Chen, Yu
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Chen, Yu
Zhou, Yucun
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Zhou, Yucun
Cuo, Zaiping
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Univ Wollongong, Sch Mech Mat & Mechatron Engn, Inst Superconducting & Elect Mat, North Wollongong, NSW 2500, AustraliaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Cuo, Zaiping
Liu, Meilin
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
机构:
Kumoh Natl Inst Technol, Sch Mat Sci & Engn, Gumi 39177, Gyeongbuk, South Korea
IT & New Applicat Battery Ctr, LG Chem Res & Dev Campus, Daejeon 34122, South KoreaKumoh Natl Inst Technol, Sch Mat Sci & Engn, Gumi 39177, Gyeongbuk, South Korea
Lee, Seung-Su
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Nam, Ki-Hun
Jung, Heechul
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Samsung SDI, Adv Mat Grp, Suwon 16678, Gyeonggi, South KoreaKumoh Natl Inst Technol, Sch Mat Sci & Engn, Gumi 39177, Gyeongbuk, South Korea
Jung, Heechul
Park, Cheol-Min
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Kumoh Natl Inst Technol, Sch Mat Sci & Engn, Gumi 39177, Gyeongbuk, South KoreaKumoh Natl Inst Technol, Sch Mat Sci & Engn, Gumi 39177, Gyeongbuk, South Korea