Size distribution effects on self-assembled InAs quantum dots

被引：0
|
作者：
S. I. Jung
H. Y. Yeo
I. Yun
J. Y. Leem
I. K. Han
J. S. Kim
J. I. Lee
机构：
[1] Yonsei University,Department of Electrical and Electronic Engineering
[2] InJe University,School of Nano Engineering, Institute for Nanotechnology Applications
[3] Korea Institute of Science and Technology (KIST),Nano Devices Research Center
[4] Electronics and Telecommunications Research Institute (ETRI),Basic Research Laboratory
[5] Korea Research Institute of Standards and Science (KRISS),Advanced Industrial Metrology Group
来源：
Journal of Materials Science: Materials in Electronics | 2007年 / 18卷
关键词：
Semiconductor Optical Amplifier; Excitation Power; Side Peak; Bimodal Size Distribution; Longe Growth Time;
D O I：
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中图分类号：
学科分类号：
摘要：
We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
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页码：191 / 194
页数：3
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