Broadening of photoluminescence by nonhomogeneous size distribution of self-assembled InAs quantum dots

被引：5
|
作者：
National Lab. for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China [1 ]
机构：
来源：
Chin. Phys. Lett. | 2008年 / 8卷 / 3059-3062期
关键词：
Size distribution;
D O I：
10.1088/0256-307X/25/8/087
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Broadening of photoluminescence by nonhomogeneous size distribution of self-assembled InAs quantum dots
    Yang Xi-Feng
    Liu Zhao-Lin
    Chen Ping-Ping
    Chen Xiao-Shuang
    Li Tian-Xin
    Lu Wei
    [J]. CHINESE PHYSICS LETTERS, 2008, 25 (08) : 3059 - 3062
  • [2] Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution
    Lee, CM
    Choi, SH
    Seo, JC
    Lee, JI
    Leem, JY
    Han, IK
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (06) : 1615 - 1618
  • [3] Size distribution effects on self-assembled InAs quantum dots
    Jung, S. I.
    Yeo, H. Y.
    Yun, I.
    Leem, J. Y.
    Han, I. K.
    Kim, J. S.
    Lee, J. I.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (Suppl 1) : S191 - S194
  • [4] Size distribution effects on self-assembled InAs quantum dots
    S. I. Jung
    H. Y. Yeo
    I. Yun
    J. Y. Leem
    I. K. Han
    J. S. Kim
    J. I. Lee
    [J]. Journal of Materials Science: Materials in Electronics, 2007, 18 : 191 - 194
  • [5] Photoluminescence of charged InAs self-assembled quantum dots
    Schmidt, KH
    Medeiros-Ribeiro, G
    Petroff, PM
    [J]. PHYSICAL REVIEW B, 1998, 58 (07): : 3597 - 3600
  • [6] Photoluminescence of an assembly of size-distributed self-assembled InAs quantum dots
    Fu, Y
    Ferdos, F
    Sadeghi, M
    Wang, SM
    Larsson, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) : 3089 - 3092
  • [7] Anti-Stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots
    Kammerer, C
    Cassabois, G
    Voisin, C
    Delalande, C
    Roussignol, P
    Gérard, JM
    [J]. COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 507 - 512
  • [8] Magnetotunnelling and photoluminescence spectroscopy of self-assembled InAs quantum dots
    Itskevich, IE
    Ihn, T
    Thornton, A
    Henini, M
    Carmona, HD
    Eaves, L
    Main, PC
    Maude, DK
    Portal, JC
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4073 - 4077
  • [9] Influence of the size of self-assembled InAs/AlAs quantum dots on photoluminescence and resonant tunneling
    Pierz, K
    Ma, Z
    Hapke-Wurst, I
    Keyser, UF
    Zeitler, U
    Haug, RJ
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 761 - 764
  • [10] Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
    Basset, Francesco Basso
    Bietti, Sergio
    Tuktamyshev, Artur
    Vichi, Stefano
    Bonera, Emiliano
    Sanguinetti, Stefano
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 126 (02)
12345