Characteristics of kesterite CZTS thin films deposited by dip-coating technique for solar cells applications

In this work, we synthesis Cu2ZnSnS4 (CZTS) thin films by sol–gel method associated to dip-coating technique on the ordinary glass substrates. We investigated the effect of dip-coating speed on the structural, morphological, optical and electrical properties of films at various speeds 30, 40, 50 and 60 mm/min, respectively. The films have been characterized by different characterization techniques such as: X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), UV–Visible spectrophotometer and four point probe method. XRD spectra showed pure kesterite CZTS with a preferential orientation along (112) plane. Raman scattering measurement showed the peak at 332 cm−1 correspond to pure CZTS phase. XPS analysis confirmed the presence of Cu, Zn, Sn and S elements on the surface of deposited CZTS. SEM images showed an improvement in density and uniformity with increasing dip-coating speed. The band gap energy is decreased with increasing of dip-coating speed in the range of 1.38–1.45 eV. The electrical conductivity increased between 4.90 and 5.81 (Ω.cm)−1. These characteristics make the deposited CZTS film a suitable material as an absorber layer in photovoltaic devices.