Preparation of PZT(53/47) thick films deposited by a dip-coating process

被引：13
|
作者：
He, XY [1 ]
Ding, AL [1 ]
Zheng, XS [1 ]
Qiu, PS [1 ]
Luo, WG [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2003年 / 66卷 / 1-4期
关键词：
PZT thick films; substrate characteristics; dip-coating process;
D O I：
10.1016/S0167-9317(02)01013-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Crack-free polycrystalline PZT (PbZrTiO3) thick films up to 15 mum with perovskite structure have been prepared from a dip-coating process. The influence of substrate characteristics, withdrawal speed and ionic concentration of precursor solution on the morphology and microstructure of PZT film was examined. The dielectric, ferroelectric and piezoelectric properties of PZT thick films on Pt/Ti substrate were measured and evaluated. PZT(53/47) thick films on Pt/Ti substrate exhibits a excellent electric properties, e.g. P-r: 35 muC/cm(2); E-c: 32 kV/cm; is an element of(r): 830; tan delta: 0.01-0.03; d(33): 142. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：865 / 871
页数：7
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