Si/SiGe electron resonant tunneling diodes

被引：35
|
作者：
Paul, DJ
See, P
Zozoulenko, IV
Berggren, KF
Kabius, B
Holländer, B
Mantl, S
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden
[3] LEO Elektronenmikroskopie GmbH, D-73446 Oberkochen, Germany
[4] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany
[5] Linkoping Univ, Dept Sci & Technol, S-60174 Norrkoping, Sweden
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期
关键词：
D O I：
10.1063/1.1309020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm(2) with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer. (C) 2000 American Institute of Physics. [S0003- 6951(00)02337-8].
引用
下载
收藏
页码：1653 / 1655
页数：3
相关论文
共 50 条
  • [11] Si/SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning
    Suet, Z.
    Paul, D. J.
    Zhang, J.
    Turner, S. G.
    APPLIED PHYSICS LETTERS, 2007, 90 (20)
  • [12] Observation of strain in pseudomorphic Si1-xGex by tracking phonon participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy
    Yu, Ronghua
    Anisha, R.
    Jin, Niu
    Chung, Sung-Yong
    Berger, Paul R.
    Gramila, Thomas J.
    Thompson, Phillip E.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (03)
  • [13] SYMMETRICAL SI/SI1-XGEX ELECTRON RESONANT TUNNELING DIODES WITH AN ANOMALOUS TEMPERATURE BEHAVIOR
    MATUTINOVICKRSTELJ, Z
    LIU, CW
    XIAO, X
    STURM, JC
    APPLIED PHYSICS LETTERS, 1993, 62 (06) : 603 - 605
  • [14] SELECTIVE GROWTH OF SI/SIGE RESONANT TUNNELING DIODES BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION
    ZASLAVSKY, A
    GRUTZMACHER, DA
    LEE, YH
    ZIEGLER, W
    SEDGWICK, TO
    APPLIED PHYSICS LETTERS, 1992, 61 (24) : 2872 - 2874
  • [15] Investigation of the emitter structure in SiGe/Si resonant tunneling structures
    Dehlinger, G
    Gennser, U
    Grützmacher, D
    Ihn, T
    Müller, E
    Ensslin, K
    THIN SOLID FILMS, 2000, 369 (1-2) : 390 - 393
  • [16] n-type Si/SiGe resonant tunnelling diodes
    Paul, DJ
    See, P
    Zozoulenko, IV
    Berggren, KF
    Holländer, B
    Mantl, S
    Griffin, N
    Coonan, BP
    Redmond, G
    Crean, GM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 26 - 29
  • [17] Electron-photon interaction in resonant tunneling diodes
    Inarrea, J
    Aguado, R
    Platero, G
    EUROPHYSICS LETTERS, 1997, 40 (04): : 417 - 422
  • [18] Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition
    Ramesh, Anisha
    Growden, Tyler A.
    Berger, Paul R.
    Loo, Roger
    Vandervorst, Wilfried
    Douhard, Bastien
    Caymax, Matty
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (03) : 602 - 609
  • [19] Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
    Jin, N
    Chung, SY
    Rice, AT
    Berger, PR
    Thompson, PE
    Rivas, C
    Lake, R
    Sudirgo, S
    Kempisty, JJ
    Curanovic, B
    Rommel, SL
    Hirschman, KD
    Kurinec, SK
    Chi, PH
    Simons, DS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) : 1876 - 1884
  • [20] Resonant tunneling in Si-SiGe superlattices on relaxed buffer substrates
    Tsujino, S
    Mentese, S
    Diehl, L
    Müller, E
    Haas, B
    Bächle, D
    Stutz, S
    Grützmacher, D
    Campidelli, Y
    Kermarrec, O
    Bensahel, D
    APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 377 - 381
12345