n-type Si/SiGe resonant tunnelling diodes

被引：10
|
作者：
Paul, DJ
See, P
Zozoulenko, IV
Berggren, KF
Holländer, B
Mantl, S
Griffin, N
Coonan, BP
Redmond, G
Crean, GM
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden
[3] Forschungszentrum Julich, Inst Schicht & Ionentechn, D-52425 Julich, Germany
[4] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 89卷 / 1-3期
关键词：
silicon; germanium; quantum effects; electronic device; tunnelling;
D O I：
10.1016/S0921-5107(01)00785-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III-V technology. Peak current densities up to 282 kA cm(-2) with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5 x 5 mum. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III-V diodes. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
下载
收藏
页码：26 / 29
页数：4
相关论文
共 50 条
  • [1] Si/SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning
    Suet, Z.
    Paul, D. J.
    Zhang, J.
    Turner, S. G.
    APPLIED PHYSICS LETTERS, 2007, 90 (20)
  • [2] Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes
    Jin, N
    Chung, SY
    Yu, R
    Berger, PR
    Thompson, PE
    ELECTRONICS LETTERS, 2005, 41 (09) : 559 - 560
  • [3] Design and fabrication of Si/SiGe n-type MODFETs
    Gluck, M
    Hackbarth, T
    Birk, M
    Haas, A
    Kohn, E
    Konig, U
    PHYSICA E, 1998, 2 (1-4): : 763 - 767
  • [4] Spin injection in n-type resonant tunneling diodes
    Gordo, Vanessa Orsi
    Herval, Leonilson K. S.
    Galeti, Helder V. A.
    Gobato, Yara Galvao
    Brasil, Maria J. S. P.
    Marques, Gilmar E.
    Henini, Mohamed
    Airey, Robert J.
    NANOSCALE RESEARCH LETTERS, 2012, 7
  • [5] Spin injection in n-type resonant tunneling diodes
    Vanessa Orsi Gordo
    Leonilson KS Herval
    Helder VA Galeti
    Yara Galvão Gobato
    Maria JSP Brasil
    Gilmar E Marques
    Mohamed Henini
    Robert J Airey
    Nanoscale Research Letters, 7
  • [6] Theoretical Analysis of n-Type Si-Based Resonant Tunneling Diodes Deposited on Either Partially or Fully Relaxed SiGe Buffer Layers
    Wu, Kuan Y.
    Cheng, Hung H.
    Hung, Kuan M.
    Sun, Greg
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (04) : 1298 - 1301
  • [7] Si/SiGe electron resonant tunneling diodes
    Paul, DJ
    See, P
    Zozoulenko, IV
    Berggren, KF
    Kabius, B
    Holländer, B
    Mantl, S
    APPLIED PHYSICS LETTERS, 2000, 77 (11) : 1653 - 1655
  • [8] Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodes
    Khorenko, E
    Prost, W
    Tegude, FJ
    Stoffel, M
    Duschl, R
    Dashiell, MW
    Schmidt, OG
    Klimeck, G
    ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004, : 29 - 32
  • [9] High f(max) n-type Si/SiGe MODFETs
    Gluck, M
    Hackbarth, T
    Konig, U
    Haas, A
    Hock, G
    Kohn, E
    ELECTRONICS LETTERS, 1997, 33 (04) : 335 - 337
  • [10] SI/SIGE RESONANT TUNNELLING DEVICES SEPARATED BY SURROUNDING POLYSILICON
    KONIG, U
    KUISL, M
    LUY, JF
    SCHAFFLER, F
    ELECTRONICS LETTERS, 1989, 25 (17) : 1169 - 1171
12345