Polarization of hot photoluminescence in GaAs/AlAs superlattices

被引：6

作者：

Sapega, VF ^{[1
]}

Perel, VI ^{[1
]}

Dobin, AY ^{[1
]}

Mirlin, DN ^{[1
]}

Akimov, IA ^{[1
]}

Ruf, T ^{[1
]}

Cardona, M ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART, GERMANY

来源：

JETP LETTERS | 1996年 / 63卷 / 04期

关键词：

D O I：

10.1134/1.567019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The polarization characteristics of hot photoluminescence in GaAs/AlAs superlattices are investigated experimentally and theoretically. It is shown that the formation of an electronic miniband in the superlattice substantially changes the polarization characteristics of the photoluminescence. As a result of the quasi-three-dimensional character of the motion of hot electrons in the superlattice, the polarization depends on the ratio of the electron kinetic energies in the plane of the superlattice and along the axis of the superlattice. (C) 1996 American Institute of Physics.

引用

页码：305 / 310

页数：6

共 50 条

[31] PHONONS IN GAAS/ALAS SUPERLATTICES
TSUCHIYA, T
AKERA, H
ANDO, T
[J]. PHYSICAL REVIEW B, 1989, 39 (09): : 6025 - 6033
[32] PHYSICS OF GAAS/ALAS SUPERLATTICES
PLANEL, R
MOLLOT, F
[J]. ACTA PHYSICA POLONICA A, 1991, 79 (01) : 71 - 82
[33] LOW-TEMPERATURE PHOTOLUMINESCENCE OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES
LITOVCHENKO, VG
BERCHA, AI
KORBUTYAK, DV
GAVRILENKO, VI
PLOOG, K
[J]. THIN SOLID FILMS, 1992, 217 (1-2) : 62 - 67
[34] TEMPERATURE BEHAVIOR OF PHOTOLUMINESCENCE SPECTRA OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES
KORBUTYAK, DV
BERCHA, AI
DEMCHINA, LA
LITOVCHENKO, VG
TROSHCHENKO, AV
[J]. FIZIKA TVERDOGO TELA, 1992, 34 (11): : 3350 - 3356
[35] INDIRECT GAAS/ALAS SUPERLATTICES
MEYNADIER, MH
[J]. SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES, 1989, 206 : 293 - 304
[36] Influence of electric field on the photoluminescence of δ-doped type II GaAs/AlAs superlattices
Gulyaev, DV
Gilinsky, AM
Toropov, AI
Bakarov, AK
Tsarev, AV
Zhuravlev, KS
[J]. PHYSICA B-CONDENSED MATTER, 2003, 340 : 1086 - 1089
[37] THERMIONIC EMISSION AND PHOTOLUMINESCENCE STUDIES OF THE ENERGY-STATES OF GAAS ALAS SUPERLATTICES
DUTTA, M
CHOI, KK
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (23) : 2429 - 2431
[38] OSCILLATORY BEHAVIOR IN THE PHOTOLUMINESCENCE EXCITATION AND PHOTOCONDUCTIVITY SPECTRA OF GAAS-ALAS SUPERLATTICES
MOORE, KJ
DUGGAN, G
DAWSON, P
FOXON, CT
PULSFORD, NJ
NICHOLAS, RJ
[J]. PHYSICAL REVIEW B, 1989, 39 (02): : 1219 - 1223
[39] Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices
Kido, R.
Satake, A.
Fujiwara, K.
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (10): : 2655 - 2657
[40] STABILITY OF GAAS/ALAS SUPERLATTICES
CHRISTENSEN, NE
[J]. SOLID STATE COMMUNICATIONS, 1988, 68 (10) : 959 - 962

← 1 2 3 4 5 →