Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories

被引：2

作者：

Guo Ting-Ting ^{[1
]}

Tan Ting-Ting ^{[1
]}

Liu Zheng-Tang ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 01期

基金：

中国国家自然科学基金;

关键词：

DEVICES;

D O I：

10.1088/0256-307X/32/1/016801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Cu/HfOx/n(+) Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O-2 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 20nm and Ar/O-2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.

引用

页数：4

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