Reliability of carbon doped MOCVD grown InGaAs/AlGaAs high power laser diodes

被引：0
|
作者：
Bulaev, PV [1 ]
Marmalyuk, AA [1 ]
Padalitsa, AA [1 ]
Nikitin, DB [1 ]
Zalevsky, ID [1 ]
Konyaev, VP [1 ]
Davydova, EI [1 ]
Shishkin, VA [1 ]
Sapozhnikov, SM [1 ]
机构：
[1] Sigm Plus Co, Moscow 117342, Russia
来源：
CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 | 2003年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：231 / 231
页数：1
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