Property of high quality carbon doped GaAs/AlGaAs materials grown by MOCVD

被引:0
|
作者
Lian, Peng
Zou, Deshu
Gao, Guo
Yin, Tao
Chen, Changhua
Xu, Zuntu
Chen, Jianxin
Shen, Guangdi
Cao, Qing
Ma, Xiaoyu
Chen, Lianghui
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
13
引用
收藏
页码:44 / 50
相关论文
共 50 条
  • [1] HIGH-PERFORMANCE CARBON-DOPED ALGAAS/GAAS HBTS GROWN BY MOCVD
    SATO, H
    TWYNAM, JK
    KINOSADA, T
    SHIMIZU, M
    TOMITA, T
    [J]. SHARP TECHNICAL JOURNAL, 1991, (51): : 17 - 20
  • [2] CARBON-DOPED BASE ALGAAS GAAS HBTS GROWN BY MOCVD USING TMAS
    ITO, H
    KOBAYASHI, T
    ISHIBASHI, T
    [J]. ELECTRONICS LETTERS, 1989, 25 (19) : 1302 - 1303
  • [3] High gain AlGaAs/GaAs HBTs grown by MOCVD
    Welser, RE
    Pan, N
    Vu, DP
    Knowles, MA
    Taulananda, I
    Miller, JG
    Stillman, GE
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 451 - 454
  • [4] High gain AlGaAs/GaAs HBTs grown by MOCVD
    Welser, RE
    Pan, N
    Vu, DP
    Knowles, MA
    Taulananda, I
    Miller, JG
    Stillman, GE
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 451 - 454
  • [5] High quality carbon doped GaAs/AlGaAs material growth by MOCVD and its application for optoelectronic devices
    Lian, P
    Yin, T
    Xu, ZT
    Zhao, HD
    Zou, DS
    Gao, G
    Du, JY
    Chen, CH
    Tao, CB
    Chen, JX
    Shen, GD
    Cao, Q
    Ma, XY
    Chen, LH
    [J]. SEMICONDUCTOR LASERS III, 1998, 3547 : 278 - 284
  • [6] HIGH-QUALITY GAAS AND ALGAAS MATERIALS GROWN BY MBE
    MARTIN, D
    TUNCEL, E
    MORIERGENOUD, F
    STAEHLI, JL
    REINHART, FK
    [J]. HELVETICA PHYSICA ACTA, 1987, 60 (02): : 205 - 208
  • [7] MOCVD growth of carbon doped GaAs/AlGaAs high power semiconductor lasers
    Lian, Peng
    Zou, Deshu
    Gao, Guo
    Yin, Tao
    Chen, Changhua
    Xu, Zuntu
    Shen, Guangdi
    Ma, Xiaoyu
    Chen, Lianghui
    [J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2000, 11 (01): : 4 - 6
  • [8] CARBON-DOPED BASE GAAS-ALGAAS HBTS GROWN BY MOMBE AND MOCVD REGROWTH
    HOBSON, WS
    REN, F
    ABERNATHY, CR
    PEARTON, SJ
    FULLOWAN, TR
    LOTHIAN, J
    JORDAN, AS
    LUNARDI, LM
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (06) : 241 - 243
  • [9] MOCVD GROWN CARBON-DOPED GRADED-BASE ALGAAS-GAAS HBTS
    ITO, H
    [J]. ELECTRONICS LETTERS, 1990, 26 (23) : 1977 - 1978
  • [10] HIGH-PERFORMANCE CARBON-DOPED BASE GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOCVD
    TWYNAM, JK
    SATO, H
    KINOSADA, T
    [J]. ELECTRONICS LETTERS, 1991, 27 (02) : 141 - 142