Reliability of carbon doped MOCVD grown InGaAs/AlGaAs high power laser diodes

被引：0
|
作者：
Bulaev, PV [1 ]
Marmalyuk, AA [1 ]
Padalitsa, AA [1 ]
Nikitin, DB [1 ]
Zalevsky, ID [1 ]
Konyaev, VP [1 ]
Davydova, EI [1 ]
Shishkin, VA [1 ]
Sapozhnikov, SM [1 ]
机构：
[1] Sigm Plus Co, Moscow 117342, Russia
来源：
CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：231 / 231
页数：1
相关论文
共 50 条
  • [41] HIGH-SPEED CARBON-DOPED-BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
    ITO, H
    YAMAHATA, S
    SHIGEKAWA, N
    KURISHIMA, K
    MATSUOKA, Y
    ELECTRONICS LETTERS, 1995, 31 (24) : 2128 - 2130
  • [42] Technology of the Production of Laser Diodes Based on GaAs/InGaAs/AlGaAs Structures Grown on a Ge/Si Substrate
    Aleshkin, V. Ya.
    Baidus, N. V.
    Dubinov, A. A.
    Kudryavtsev, K. E.
    Nekorkin, S. M.
    Novikov, A. V.
    Rykov, A. V.
    Samartsev, I. V.
    Fefelov, A. G.
    Yurasov, D. V.
    Krasilnik, Z. F.
    SEMICONDUCTORS, 2017, 51 (11) : 1477 - 1480
  • [43] Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    V. Ya. Aleshkin
    N. V. Baidus
    A. A. Dubinov
    K. E. Kudryavtsev
    S. M. Nekorkin
    A. V. Novikov
    A. V. Rykov
    I. V. Samartsev
    A. G. Fefelov
    D. V. Yurasov
    Z. F. Krasilnik
    Semiconductors, 2017, 51 : 1477 - 1480
  • [44] High-reliability MOCVD-grown quantum dot laser
    Sellin, RL
    Ribbat, C
    Bimberg, D
    Rinner, F
    Konstanzer, H
    Kelemen, MT
    Mikulla, M
    ELECTRONICS LETTERS, 2002, 38 (16) : 883 - 884
  • [45] High performance 980 nm emission wavelength InGaAs/AlGaAs/GaAs laser diodes
    Suruceanu, GI
    Caliman, AN
    Vieru, SF
    Iakovlev, VP
    Sarbu, AV
    Mereuta, AZ
    SIOEL '99: SIXTH SYMPOSIUM ON OPTOELECTRONICS, 2000, 4068 : 310 - 316
  • [46] High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
    Davydova, E. I.
    Zverkov, M. V.
    Konyaev, V. P.
    Krichevskii, V. V.
    Ladugin, M. A.
    Marmalyuk, A. A.
    Padalitsa, A. A.
    Simakov, V. A.
    Sukharev, A. V.
    Uspenskii, M. V.
    QUANTUM ELECTRONICS, 2009, 39 (08) : 723 - 726
  • [47] High gain AlGaAs/GaAs HBTs grown by MOCVD
    Welser, RE
    Pan, N
    Vu, DP
    Knowles, MA
    Taulananda, I
    Miller, JG
    Stillman, GE
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 451 - 454
  • [48] High gain AlGaAs/GaAs HBTs grown by MOCVD
    Welser, RE
    Pan, N
    Vu, DP
    Knowles, MA
    Taulananda, I
    Miller, JG
    Stillman, GE
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 451 - 454
  • [49] On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    V. Ya. Aleshkin
    N. V. Baidus
    A. A. Dubinov
    Z. F. Krasilnik
    S. M. Nekorkin
    A. V. Novikov
    A. V. Rykov
    D. V. Yurasov
    A. N. Yablonskiy
    Semiconductors, 2017, 51 : 663 - 666
  • [50] On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    Aleshkin, V. Ya.
    Baidus, N. V.
    Dubinov, A. A.
    Krasilnik, Z. F.
    Nekorkin, S. M.
    Novikov, A. V.
    Rykov, A. V.
    Yurasov, D. V.
    Yablonskiy, A. N.
    SEMICONDUCTORS, 2017, 51 (05) : 663 - 666
12345