Dual-Gate Field-Effect Transistor Hydrogen Gas Sensor with Thermal Compensation

被引：22

作者：

Tsukada, Keiji ^{[1
]}

Kariya, Masatoshi ^{[1
]}

Yamaguchi, Tomiharu ^{[1
]}

Kiwa, Toshihiko ^{[1
]}

Yamada, Hironobu ^{[1
]}

Maehara, Tsuneyoshi ^{[2
]}

Yamamoto, Tadayoshi ^{[2
]}

Kunitsugu, Shinsuke ^{[3
]}

机构：

[1] Okayama Univ, Grad Sch Nat Sci & Technol, Kita Ku, Okayama 7008530, Japan

[2] Phenitec Semicond Corp, Okayama 7158602, Japan

[3] Ind Technol Ctr, Kita Ku, Okayama 7011296, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 02期

关键词：

SCHOTTKY DIODES; SURFACE; MECHANISM;

D O I：

10.1143/JJAP.49.024206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 degrees C because of the same temperature dependence of the current-voltage (I-V) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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