Magnetoresistance mobility measurements in sub 0.1μm si MOSFETs

被引：6

作者：

Meziani, YM ^{[1
]}

Lusakowski, J ^{[1
]}

Teppe, F ^{[1
]}

Dyakonova, N ^{[1
]}

Knap, W ^{[1
]}

Romanjek, K ^{[1
]}

Ferrier, M ^{[1
]}

Clerc, R ^{[1
]}

Ghibaudo, G ^{[1
]}

Boeuf, F ^{[1
]}

Skotnicki, T ^{[1
]}

机构：

[1] Univ Montpellier 2, GES, F-34000 Montpellier, France

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSDER.2004.1356513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, for the first time, are reported magnetoresistance (MR) mobility measurements performed on sub 0.1 mum Si MOSFETs. This method enables the carrier mobility to be measured from weak to strong inversion without knowing the device channel length. The MR mobility results are compared to effective mobility data obtained by standard parameter extraction and split C-V techniques. The MR data clearly indicate a significant decrease of the mobility with the gate length reduction. This behavior and the difference between MR and effective mobility values are discussed and interpreted by two-dimensional transport analysis.

引用

页码：157 / 160

页数：4

共 50 条

[31] Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs:: optimization of the device architecture
Ernst, T
Tinella, C
Raynaud, C
Cristoloveanu, S
SOLID-STATE ELECTRONICS, 2002, 46 (03) : 373 - 378
[32] SIMULATION OF SUB-0.1-MU-M MOSFETS WITH COMPLETELY SUPPRESSED SHORT-CHANNEL EFFECT
TANAKA, J
TOYABE, T
IHARA, S
KIMURA, S
NODA, H
ITOH, KY
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) : 396 - 399
[33] Towards sub-0.1 mu m CD measurements using scatterometry
Minhas, BK
Prins, SL
Naqvi, SSH
McNeil, JR
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY X, 1996, 2725 : 729 - 739
[34] Analytical Correction for Effective Mobility Measurements in MOSFETs
Morgensen, Michael P.
Lunardi, Leda M.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 2871 - 2873
[35] NEW EXPERIMENTAL FINDINGS ON HOT-CARRIER EFFECTS IN SUB-0.1 MU-M MOSFETS
BALESTRA, F
MATSUMOTO, T
TSUNO, M
NAKABAYASHI, H
KOYANAGI, M
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) : 433 - 435
[36] Deep sub-0.1-μm MOSFETs with very thin SOI layer for ultralow-power applications
Takamiya, M
Yasuda, Y
Hiramoto, T
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1998, 81 (11): : 18 - 25
[37] A study of electrical characteristics improvements in sub-0.1 μm gate length MOSFETs by low temperature operation
Tsuno, M
Yokoyama, S
Shibahara, K
IEICE TRANSACTIONS ON ELECTRONICS, 1998, E81C (12) : 1913 - 1917
[38] INFLUENCE OF MAGNETORESISTANCE ON HALL-MOBILITY MEASUREMENTS
DEMEY, G
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1974, 28 (7-8) : 335 - 336
[39] NON-METALLIC LOCALIZATION AND INTERACTION IN ONE-DIMENSIONAL (0.1-MU-M) SI MOSFETS
SKOCPOL, WJ
JACKEL, LD
HOWARD, RE
HU, EL
FETTER, LA
PHYSICA B & C, 1983, 117 (MAR): : 667 - 669
[40] High-frequency characteristics and its dependence on parasitic components in 0.1 mu m Si-MOSFETs
Yamamoto, T
Tanabe, A
Togo, M
Furukawa, A
Mogami, T
1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 136 - 137

← 1 2 3 4 5 →