Multi-level storage in non-volatile phase-change nanophotonic memories

被引：0
|
作者：
Rios, Carlos [1 ]
Stegmaier, Matthias [2 ,3 ]
Wright, C. David [4 ]
Pernice, Wolfram H. P. [2 ,3 ]
Bhaskaran, Harish [1 ]
机构：
[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England
[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76344 Eggenstein Leopoldshafen, Germany
[3] Univ Munster, Dept Phys, D-48149 Munster, Germany
[4] Univ Exeter, Dept Engn, Exeter EX4 QF, Devon, England
来源：
2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a new implementation of phase-change chalcogenide materials onto integrated photonic circuits for on-chip non-volatile memories. In particular, we demonstrate readily multi-level transmission modulation and present an analysis on the achievability and number of accessible levels.
引用
收藏
页码：408 / 409
页数：2
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