A Novel Ferroelectric Superlattice Based Multi-Level Cell Non-Volatile Memory

被引：37

作者：

Ni, Kai ^{[1
]}

Smith, Jeffrey ^{[1
]}

Ye, Huacheng ^{[1
]}

Grisafe, Benjamin ^{[1
]}

Rayner, G. Bruce ^{[3
]}

Kummel, Andrew ^{[2
]}

Datta, Suman ^{[1
]}

机构：

[1] Univ Notre Dame, Notre Dame, IN 46556 USA

[2] Univ Calif San Diego, San Diego, CA 92103 USA

[3] Kurt J Lesker Co, Jefferson Hills, PA USA

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel ferroelectric (FE) superlattice based multi-level cell (MLC) memory, which outperforms previous multi-state FE memory implemented using partial polarization SW itching, from the standpoint of device-to-device variation. We show that the FE superlattice consisting of alternate FE and dielectric (DE) thin layers provides a scalable approach for MLC implementation because: 1) the superlattice constructs controlled layer-by layer polarization switching in the constituent FE layers; 2) the number of FE layers equals the number of stored bits: and, finally, (3) the switching of all the domains in a given coercive field (E-C) distribution associated with one isolated peak suppresses the variation induced by partial polarization switching. Based on these, we experimentally demonstrate a 2-bit/cell FE superlattice memory and simulate a 3-bit/cell memory with excellent device-to-device variation.

引用

页数：4

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