Multi-level storage in non-volatile phase-change nanophotonic memories

被引：0

作者：

Rios, Carlos ^{[1
]}

Stegmaier, Matthias ^{[2
,3
]}

Wright, C. David ^{[4
]}

Pernice, Wolfram H. P. ^{[2
,3
]}

Bhaskaran, Harish ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England

[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76344 Eggenstein Leopoldshafen, Germany

[3] Univ Munster, Dept Phys, D-48149 Munster, Germany

[4] Univ Exeter, Dept Engn, Exeter EX4 QF, Devon, England

来源：

2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new implementation of phase-change chalcogenide materials onto integrated photonic circuits for on-chip non-volatile memories. In particular, we demonstrate readily multi-level transmission modulation and present an analysis on the achievability and number of accessible levels.

引用

页码：408 / 409

页数：2

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